Mahbub Alam

Professor, Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET)

prof_pic.jpg

Room ECE 427, ECE Building

Department of EEE, BUET

Dhaka 1205, Bangladesh

PABX: 6566

I am a Professor in the Department of Electrical and Electronic Engineering at BUET, where I have taught since 1999. My research is in computational nanoelectronics. I study how electrons move through nanoscale and quantum materials, and how that transport can be turned into devices: transistors, detectors and energy converters.

The core of my group’s work is a first-principles-to-device simulation chain. It starts with density functional theory (Quantum ESPRESSO), uses maximally localized Wannier functions to build tight-binding Hamiltonians (Wannier90, Z2Pack), feeds them to non-equilibrium Green’s function (NEGF) quantum transport, and scales up to TCAD device simulation (Sentaurus, Silvaco).

Current topics include:

  • Topological-insulator FETs: gate-field-driven quantum spin Hall to trivial transitions in 1T′-MoS₂, 1T′-WTe₂, stanene, Bi₄X₄ (X = Br, I) and Bi₂Se₃ nanoribbons
  • 2D-material transistors and contacts: borophene, black phosphorus, graphene nanoribbons, graphynes, bismuthene and MoSe₂ nanoribbons, and Fermi-level pinning at metal/2D contacts such as NbₓW₁₋ₓSe₂/WSe₂
  • Materials research and thermoelectrics: first-principles screening of 2D and topological materials, and strain- and pressure-engineered Bi₂Te₃
  • TCAD simulations and CFET: Sentaurus/Silvaco device simulation, gate-all-around and complementary FET structures
  • FeFET and SOT memory, predictive coding: device-aware neuromorphic and in-memory hardware
  • Photonic biosensors: PCF-SPR sensors with molecularly imprinted polymer layers
  • Coherent electron–photon interaction in graphene nanostructures (my PhD work at Georgia Tech on quantum-interference photodetectors)
  • Power systems: wireless EV charging, automatic voltage regulators, solar PV integration, and grid simulation with machine-learning prediction of power-plant derating

Research

Outside research, I provide engineering consultancy through the Bureau of Research, Testing and Consultation (BRTC), BUET. This includes forensic investigation of electrical fires, product testing and reliability assessment, technical committee work for government agencies, and recruitment examinations for public-sector utilities. See consultancy for details.

I received my Ph.D. from the School of Electrical and Computer Engineering at the Georgia Institute of Technology (2016), and my M.Sc. (2006) and B.Sc. (1999) in EEE from BUET.

Prospective students: I supervise B.Sc. (EEE 400) and M.Sc. theses in quantum transport, first-principles device modeling and TCAD. Students with a strong background in solid-state physics, programming (Python or MATLAB) or Linux-based scientific computing are encouraged to get in touch.

news

Sep 29, 2026 New website launched, with a section of interactive research applets.
Sep 01, 2026 Serving as Convener of the Sponsor Sub-Committee for ICECE 2026 (December 2026, BUET, Dhaka).
Jun 16, 2026 Paper on bilayer α₁₂-borophene nanoribbons accepted in J. Computational Electronics.
Aug 01, 2022 Promoted to Professor, Department of EEE, BUET.

selected publications

  1. Interlayer-engineering of charge order wavevector in kagome metals
    Muntafa M Mahi, Quazi DM Khosru, M Zahid Hasan, Mahbub Alam, and Md Shafayat Hossain
    Physical Review Materials, 2026
  2. Does stanene show promise for energy efficient 2D FETs?
    Dhiman Roy, Md Niloy Khan, and Mahbub Alam
    Physica Scripta, 2026
  3. JCE
    Electric field-induced band quenching and semiconductor-to-metal transition in bilayer \alpha_12-borophene nanoribbons
    Shovon Sarkar, Md Niloy Khan, and Mahbub Alam
    Journal of Computational Electronics, 2026
    Accepted, in press
  4. Topological phase transition in 1T′-WTe_2 zigzag and armchair edge nanoribbons with the applied out-of-plane electric field for application in FET
    Joy Sharma, Md Niloy Khan, Mahfuzur Rahman Munna, Adib Md Ridwan, and Mahbub Alam
    Journal of Physics: Condensed Matter, 2026
  5. CCM
    Performance evaluation of Bi_4X_4 (X= Br, I) nanoribbon topological field-effect transistors: A DFT-NEGF-based study
    Mushfiquzzaman Abid, Fahim Ahmed, Jonaidul Islam Sikder, and Mahbub Alam
    Computational Condensed Matter, 2026
  6. Dissipationless edge transport in single-layer topological insulator Bi_4Br_4 based device under high vacancy concentration
    Md Niloy Khan and Mahbub Alam
    Journal of Physics: Condensed Matter, 2025
  7. NJP
    Bismuthene nanoribbon topological field-effect transistor: a DFT-NEGF-based study
    Mahfuzur Rahman Munna and Mahbub Alam
    New Journal of Physics, 2025