electronics and photonics

Quantum-transport modelling of nanoscale electronic, thermoelectric and optoelectronic devices.

← Research

Quantum transportNEGFDFTWannier functionsTopological insulators2D materialsTCADFeFET memorySOT memoryPredictive codingCFETPhotonic biosensorsPCF-SPRContacts and Fermi-level pinningThermoelectrics

Research directions

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Topological-insulator FETs

Gate-field-driven quantum spin Hall to trivial transitions in 1T′-MoS₂, 1T′-WTe₂, stanene and Bi₄X₄ (X = Br, I) nanoribbons, and how helical edge conduction and Kramers protection behave under disorder and realistic gate stacks.

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2D-material transistors

Borophene, black phosphorus (gate-all-around nanosheets), graphene nanoribbons, graphynes, bismuthene and MoSe₂ nanoribbons. We look at electric-field-induced gap engineering and short-channel limits.

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Metal contacts to 2D semiconductors

Fermi-level pinning at metallic NbₓW₁₋ₓSe₂/WSe₂ van der Waals contacts: first-principles (PBE+SOC+D3) band alignment, metal-induced gap states and the charge-neutrality level, showing that the small hole barrier comes from valence-side pinning and persists under Nb/W alloying. With Ahnaf Rashid Olee.

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Thermoelectric materials

Pressure- and strain-engineered Bi₂Te₃ and related topological thermoelectrics, using DFT + spin-orbit coupling and Boltzmann transport (BoltzTraP2).

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Materials research

First-principles screening and design of 2D, topological and thermoelectric materials: band structure, spin–orbit coupling, Wannier interpolation and topology (Z₂, nodal lines), with attention to contacts, dielectrics and stability.

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TCAD simulations

Device-level simulation in Sentaurus and Silvaco: 3D electrostatics, short-channel and gate-all-around structures, drift-diffusion and hydrodynamic models, calibrated against measurements and atomistic results.

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Ferroelectric FET (FeFET) memory

Ferroelectric-gate transistors for non-volatile memory and in-memory computing: polarization switching, retention and endurance, multi-gate and dendritic FeFETs, simulated across TCAD and SPICE.

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SOT memory

Spin–orbit-torque magnetic memory: topological-insulator and heavy-metal spin sources, spin textures in Bi₂Se₃-type nanoribbons, and switching efficiency and energy of SOT devices.

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Predictive coding

Predictive-coding networks mapped onto device-aware hardware, so that learning rules run on FeFET and other emerging devices with their real non-idealities.

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Complementary FET (CFET)

Vertically stacked n- and p-type channels for continued scaling below the nanosheet node: electrostatics, parasitics and variability, studied with TCAD and compact models.

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Photonic biosensors

Photonic-crystal-fibre surface-plasmon-resonance (PCF-SPR) sensors with molecularly imprinted polymer (MIP) sensing layers, designed for selective detection of pathogens such as faecal streptococci in drinking water.

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Coherent electron–photon interaction

Phase-coherent optoelectronics in graphene nanostructures: quantum-interference photodetectors, wavelength-dependent photocurrent switching and nanoscale spectrometers (from my PhD at Georgia Tech).

Methods and tools

Layer Tools
Electronic structure Quantum ESPRESSO (PBE, HSE06, SOC, DFT-D3), Wannier90, WannierTools, Z2Pack
Quantum transport Custom NEGF codes (MATLAB, Python), Landauer–Büttiker, self-consistent Schrödinger–Poisson, phonon dephasing
Device / TCAD Synopsys Sentaurus, Silvaco ATLAS, SPICE, 3D electrostatics
Transport theory BoltzTraP2, drift-diffusion, hydrodynamic and Monte-Carlo comparisons